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| 2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 4 at VGS = 4.5 V rDS(on) () 2 at VGS = 10 V 1.0 to 2.5 0.33 VGS(th) (V) ID (A) 0.47 FEATURES * TrenchFET(R) Power MOSFET * ESD Protected: 2000 V APPLICATIONS * Direct Logic-Level Interface: TTL/CMOS * Solid-State Relays * Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. * Battery Operated Systems Pb-free Available RoHS* COMPLIANT TO-226AA (TO-92) S 1 Device Marking Front View "S" 2N 7000KL xxyy "S" = Siliconix Logo xxyy = Date Code TO-92-18RM (TO-18 Lead Form) D 1 Device Marking Front View "S" BS 170KL xxyy "S" = Siliconix Logo xxyy = Date Code G D 100 G 2 G 2 D 3 S 3 Top View Top View S Ordering Information: 2N7000KL-TR1 Ordering Information: BS170KL-TR1 2N7000KL-TR1-E3 (Lead (Pb)-free) BS170KL-TR1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C)b Pulsed Drain Currenta TA = 25 C TA = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Limit 60 20 0.47 0.37 1.0 0.8 0.51 158 - 55 to 150 W C/W C A V Unit Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes: a. Pulse width limited by maximum junction temperature. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72705 S-72202-Rev. B, 22-Oct-07 www.vishay.com 1 2N7000KL/BS170KL Vishay Siliconix SPECIFICATIONS TA = 25 C, unless otherwise noted Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-Resistanceb Forward Transconductanceb Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Time Turn-Off Time Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 30 V, RL = 150 ID 0.2 A, VGEN = 10 V, RG = 10 VDS = 10 V, VGS = 4.5 V ID 0.25 A 0.4 0.11 0.15 173 3.8 4.8 12.8 9.6 10 15 20 15 ns pF 0.6 nC V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = 10 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 10 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55 C VGS = 10 V, VDS = 7.5 V VGS = 4.5 V, VDS = 10 V VGS = 10 V, ID = 0.5 A VGS = 4.5 V, ID = 0.2 A VDS = 10 V, ID = 0.5 A IS = 0.3 A, VGS = 0 V 0.8 0.5 1.1 1.6 550 0.87 1.3 2 4 60 1 2.0 2.5 1 1 10 A ms V A V Symbol Test Conditions Min Typ Max Unit Notes: a. Pulse test: PW 300 s duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1.0 6V VGS = 10, 7 V 0.8 I D - Drain Current (A) 5V 0.9 I D - Drain Current (A) 25 C 125 C 0.6 TJ = - 55 C 1.2 0.6 0.4 4V 0.3 0.2 3V 0.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics www.vishay.com 2 Document Number: 72705 S-72202-Rev. B, 22-Oct-07 2N7000KL/BS170KL Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 4.0 3.5 r DS(on) - On-Resistance () 32 3.0 2.5 2.0 1.5 1.0 8 0.5 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 Crss VGS = 4.5 V VGS = 10 V C - Capacitance (pF) 24 Ciss 40 VGS = 0 V 16 Coss ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 7 6 VGS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0.0 0.0 - 50 VDS = 10 V ID = 250 mA rDS(on) - On-Resistance (Normalized) 2.0 Capacitance VGS = 10 V at 500 mA 1.6 1.2 VGS = 4.5 V at 200 mA 0.8 0.4 0.1 0.2 0.3 0.4 0.5 0.6 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge 1000 VGS = 0 V r DS(on) - On-Resistance () 4 5 On-Resistance vs. Junction Temperature I S - Source Current (A) 100 TJ = 125 C 3 2 ID = 200 mA ID = 500 mA 10 TJ = 25 C 1 TJ = - 55 C 1 0.00 0.3 0.6 0.9 1.2 1.5 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage Document Number: 72705 S-72202-Rev. B, 22-Oct-07 www.vishay.com 3 2N7000KL/BS170KL Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.4 20 0.2 V GS(th) Variance (V) ID = 250 A 0.0 Power (W) 16 12 - 0.2 8 TA = 25 C - 0.4 4 - 0.6 - 0.8 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (s) 10 100 600 TJ - Junction Temperature (C) Threshold Voltage Variance Over Temperature 10 IDM Limited Limited by rDS(on)* 1 I D - Drain Current (A) Single Pulse Power, Junction-to-Ambient 1 ms 10 ms 0.1 ID(on) Limited 100 ms 1s 10 s DC TA = 25 C Single Pulse BVDSS Limited 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified 0.01 Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 350 C/W Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (s) 10-1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72705. www.vishay.com 4 Document Number: 72705 S-72202-Rev. B, 22-Oct-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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